Document
AON7409
30V P-Channel MOSFET
General Description
Product Summary
• The AON7409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
• RoHS and Halogen-Free Compliant.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V)
Typical ESD protection
100% UIS Tested 100% Rg Tested
-30V -32A < 8.5mΩ < 17mΩ
HBM Class 2
DFN 3x3 EP
Top View
Bottom View
Top View
Pin 1
Pin 1
1 2 3 4
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
8 7 .