AT45DB080

Features Single 2.7V - 3.6V Supply Sequential Access, Parallel I/O Architecture Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory Two 264-Byte Data Buffers – Allows Receiving of Data while Reprogramming of Non-Volatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low Power Dissipation – 4 mA Active Read Current Typical – 2 µA CMOS Standby Current Typical 2 MHz Max Clock Frequency Hardware Data Protection Feature Synchronous Clocking (Two Modes) CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges Description The AT45DB080 is a 2.7-volt only, sequential access, parallel interface Flash memory suitable for in-system reprogramming. Its 8,650,752 bits of memory are organized as 4096 pages of 264-bytes each. In addition to the main memory, the AT45DB080 also contains two data buffers of 264-bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, 8-Megabit 2.7-volt Only Sequential Access Parallel I/O DataFlash® AT45DB080 Preliminary (continued) Pin Configurations Pin Name CS CLK I/O7-I/O0 WP RESET RDY/BUSY Function Chip Select Clock Input/Output Hardware Page Write Protect Pin Chip Reset Ready/Busy TSOP Top View Type 1 R...