AT45DB321

Features Single 2.7V - 3.6V Supply Serial-interface Architecture Page Program Operation – Single Cycle Reprogram (Erase and Program) – 8192 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations Two 528-byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming of Nonvolatile Memory Internal Program and Control Timer Fast Page Program Time – 7 ms Typical 120 µs Typical Page to Buffer Transfer Time Low-power Dissipation – 4 mA Active Read Current Typical – 3 µA CMOS Standby Current Typical 13 MHz Max Clock Frequency Hardware Data Protection Feature Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3 CMOS and TTL Compatible Inputs and Outputs Commercial and Industrial Temperature Ranges Description The AT45DB321 is a 2.7-volt only, serial-interface Flash memory suitable for in-sys- tem reprogramming. Its 34,603,008 bits of memory are organized as 8192 pages of 528 bytes each. In addition to the main memory, the AT45DB321 also contains two SRAM data buffers of 528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Unlike conventional Flash memo- (continued) Pin Configurations CBGA Top View Through Package Pin Name Function 12345 CS SCK SI SO WP RESET RDY/BUSY Chip Select Serial Clock Serial Input Serial Output Hardware Page Write Protect Pin Chip Reset Ready/Busy A NC NC NC NC B NC NC NC NC NC C NC NC NC NC NC D NC SCK GND VCC NC E NC CS RDY/BSY ...