Semiconductor
September 1998
RFP45N03L, RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSF...
Semiconductor
September 1998
RFP45N03L, RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
[ /Title (RFP45 N03L, RF1S45 N03L, RF1S45 N03LS M) /Subject (45A, 30V, 0.022 Ohm,
Features
45A, 30V
rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model
Can be Driven Directly from CMOS, NMOS, and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve 175oC Operating Temperature
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Description
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching
regulators, switching converters, motor drivers and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmen...