IXER20N120D1

NPT3 IGBT in ISOPLUS247™ IXER 20N120 IXER 20N120D1 IC25 = 36 A VCES = 1200 V VCE(sat)typ = 2.4 V C C ISOPLUS247™ GG E IXER 20N120 E IXER 20N120D1 G C E G = Gate  Isolated Backside C = Collector E = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive TC = 25°C Maximum Ratings 1200 V ± 20 V 29 A 19 A 40 VCES 10 A µs 130 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthCH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load L = 100 µH; TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 68 Ω VCE = 25 V;...