Si9950DY

Complementary MOSFET Half-Bridge Si9950DY Product Summary VDS (V) rDS(on) (W) N- or P-Channel 50 0.3 @ VGS = 10 V 1.0 @ VGS = 5 V Alternate Solution: one Si9948DY and one Si9945DY SO-16 ID (A) "2.0 "1.2 V+ V+ GND OUTPUT OUTPUT P-GATE OUTPUT OUTPUT OUTPUT V+ 1 2 3 4 5 6 7 8 16 GND 15 OUTPUT 14 OUTPUT 13 N-GATE 12 OUTPUT 11 OUTPUT 10 OUTPUT 9 V+ P-GATE N-GATE OUTPUT Top View GND GND Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol N- or P-Channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 50 "20 "2.0 "1.7 "8 2.8 2.3 1.5 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol N- or P-Channel Unit Maximum Junction-to-Ambienta RthJA 55 _C/W Notes a. Surface Mounted on F...