Document
Si9955DY
Dual N-Channel Enhancement-Mode MOSFET
Product Summary
VDS (V)
rDS(on) (W)
0.13 @ VGS = 10 V 50
0.20 @ VGS = 4.5 V
Recommended upgrade: Si9945DY
ID (A) "3.0 "1.5
D1 D1
D2 D2
SO-8
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
50 "20 "3.0 "2.3 "10 2.0 2.0 1.3 –55 to 150
V
A
W _C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
62.5 _C/W
Notes a. Surface Mounted on FR4 Board, t v 10 sec.
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