Si9956DY

Si9956DY Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.10 @ VGS = 10 V 0.20 @ VGS = 4.5 V SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View ID (A) "3.5 "2.0 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 20 "20 "3.5 "2.8 "14 1.7 2.0 1.3 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta RthJA Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70140 S-00652—Rev. L, 27-Mar...