Si6436DQ

N-Channel 30-V (D-S) Rated MOSFET Si6436DQ Product Summary VDS (V) 30 rDS(on) (W) 0.045 @ VGS = 10 V 0.070 @ VGS = 4.5 V ID (A) "4.4 "3.5 D TSSOP-8 D1D S2 Si6436DQ S3 G4 Top View 8D 7S 6S 5D *Source Pins 2, 3, 6 and 7 G must be tied common. S* N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 "4.4 "3.5 "30 1.7 1.5 1.0 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Symbol RthJA Limit 83 Unit _C/W Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBa...