Dual 20V P-Channel PowerTrench MOSFET
Si6953DQ
September 2001
Si6953DQ
Dual 20V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is ...
Description
Si6953DQ
September 2001
Si6953DQ
Dual 20V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
Applications
Load switch Battery protection DC/DC conversion Power management
Features
–1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V. RDS(ON) = 320 mΩ @ VGS = –4.5V.
Extended VGSS range (±20V) for battery applications
Low gate charge
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS
ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG...
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