TEMIC
Siliconix
P-Channel Enhancement-Mode Transistor
Product Summary
V(BR)nSS (V)
-50
rnS(on) (Q) 0.40
In (A)
-7.0
...
TEMIC
Siliconix
P-Channel Enhancement-Mode
Transistor
Product Summary
V(BR)nSS (V)
-50
rnS(on) (Q) 0.40
In (A)
-7.0
TO·220AB
o
DRAIN connected to TAB
S
BUZ171
GDS Top View
D P-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Dram Current
Pulsed Drain Current'
Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (11t6" from case for 10 sec.)
ITc=25'C ITc = 100'C
LTC = 25'C ITc = 100'e
Symbol VDS VGS
ID
IDM
PD TJ,T,tg
TL
Limit
-50 ±20 -7.0 -4.5 -28 40 16 -55 to 150 300
Unit V
A
W
'c
Thermal Resistance Ratings
Parameter Junction-la-Ambient Junction-la-Case Case-to-Sink
Notes:
a. Pulse width lImited by maximum junction temperature
P-36731-Rev. D (05/30/94)
Symbol
RthJA RthJC RthCS
Iypital 1.0
Maximum 75 3.1
Unit 'e{W
6-9
BUZ171
Specifications (TJ - 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Stati~
Drain-Source Breakdow...
