MOD100B

TEMIC Siliconix MODIOOB/IOOC Four N-Channel Enhancement-Mode Thansistors Product Summary V(BR)DSS (V) 100 rDS(on) (9) 0.08 ID (A) 21 D DD S S Leadform Options GG G G MOD100B . .. Bent Down MODlOOC . .. Bent Up SS DD S N-Channel MOSFET =Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150·C) Pulsed Drain Current Avalanche Current (See Thermal Ratings) Maximum Power Dissipation Operating Junction and Storage 'Thmperature Range Isolation Voltage ITc=2S·C ITc = 100·C I Tc=2SoC ITc = 100·C Symbol VDS VGS ID IDM IA Pn Tl. Tstg VISOL Single Die .All Die 100 100 ±20 ±20 21 84 21 70 125 440 21 150 400 60 100 -55 to 150 1000 Unit V A W °C V Thermal Resistance Ratings Parameter Maximum Junction·to-Ambient Maximum Junction-ta-Case Case-ta-Sink Symbol RthIA RthJC RthCS P-36734-Rev. D (05/30/94) 'JYpieal 0.1 SinglcDlc 30 0.83 .All Die 30 0.31 Unit 0C;W 6-53 TEMIC...