Document
TEMIC
Siliconix
MODIOOB/IOOC
Four N-Channel Enhancement-Mode Thansistors
Product Summary
V(BR)DSS (V) 100
rDS(on) (9) 0.08
ID (A) 21
D
DD S S Leadform Options
GG
G
G
MOD100B . .. Bent Down MODlOOC . .. Bent Up
SS
DD
S N-Channel MOSFET
=Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150·C)
Pulsed Drain Current Avalanche Current (See Thermal Ratings)
Maximum Power Dissipation
Operating Junction and Storage 'Thmperature Range Isolation Voltage
ITc=2S·C ITc = 100·C
I Tc=2SoC ITc = 100·C
Symbol VDS VGS
ID
IDM IA
Pn
Tl. Tstg VISOL
Single Die
.All Die
100 100 ±20 ±20 21 84 21 70 125 440 21 150 400 60 100
-55 to 150 1000
Unit V
A
W °C V
Thermal Resistance Ratings
Parameter
Maximum Junction·to-Ambient Maximum Junction-ta-Case Case-ta-Sink
Symbol
RthIA RthJC RthCS
P-36734-Rev. D (05/30/94)
'JYpieal 0.1
SinglcDlc 30 0.83
.All Die
30 0.31
Unit
0C;W
6-53
TEMIC.