SMP40P06

SMP40P06 P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –60 rDS(on) (W) 0.045 TO-220AB ID (A) –40 S G DRAIN connected to TAB GD S Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 100_C L = 0.1 mH L = 0.05 mH TC = 25_C TC = 100_C VDS VGS ID IDM IAR EAS EAR PD TJ, Tstg –60 "20 –40 –30 –100 –40 90 45 125 62 –55 to 175 V A mJ W _C Thermal Resistance Ratings Parameter Symbol Typical Maximum Unit Junction-to-Ambient RthJA 80 Junction-to-Case RthJC 1.2 _C/W Case-to-Sink RthCS 1.0 Notes: a. Duty cycle v 1%. Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please re...