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2N6849 Dataheets PDF



Part Number 2N6849
Manufacturers TT
Logo TT
Description P-CHANNEL POWER MOSFET
Datasheet 2N6849 Datasheet2N6849 Datasheet (PDF)

P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage -100V VDG Drain – Gate Voltage RGS = 20KΩ -100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C -6.5A ID Continuous Drain Current T.

  2N6849   2N6849



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P-CHANNEL POWER MOSFET IRFF9130 / 2N6849 • MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain – Source Voltage -100V VDG Drain – Gate Voltage RGS = 20KΩ -100V VGS Gate – Source Voltage ±20V ID Continuous Drain Current Tc = 25°C -6.5A ID Continuous Drain Current Tc = 100°C -4.1A IDM Pulsed Drain Current (1) -25A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.2W/°C EAS Single Pulse Avalanche Energy (2)(4) 500mJ TJ Junction Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case RθJA Thermal Resistance, Junction To Ambient Max. 5 175 Units °C/W °C/W INTERNAL PACKAGE INDUCTANCE Symbols Para.


IRFF9130 2N6849 2N6851


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