Document
P-CHANNEL POWER MOSFET
IRFF9130 / 2N6849
• MOSFET Transistor In A Hermetic Metal TO-205AF Package • Single Pulse Avalanche Energy Rated • Designed For Switching, Power Supply,
Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage
-100V
VDG
Drain – Gate Voltage
RGS = 20KΩ
-100V
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current Tc = 25°C
-6.5A
ID Continuous Drain Current Tc = 100°C
-4.1A
IDM Pulsed Drain Current (1)
-25A
PD Total Power Dissipation at Tc = 25°C
25W
Derate Above 25°C
0.2W/°C
EAS Single Pulse Avalanche Energy (2)(4)
500mJ
TJ Junction Temperature Range
-55 to +150°C
Tstg Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Max. 5
175
Units °C/W °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Para.