POWER MOSFET. 2N6851 Datasheet

2N6851 MOSFET. Datasheet pdf. Equivalent

Part 2N6851
Description P-CHANNEL POWER MOSFET
Feature P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package • Dynamic dv/dt Rating • Simple Drive Re.
Manufacture TT
Datasheet
Download 2N6851 Datasheet

www.DataSheet4U.com 2N6851 Dimensions in mm (inches). 8.64 2N6851 Datasheet
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P-CHANNEL POWER MOSFET 2N6851 • Hermetic TO39 Metal Package 2N6851 Datasheet
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2N6851
P-CHANNEL
POWER MOSFET
2N6851
Hermetic TO39 Metal Package
Dynamic dv/dt Rating
Simple Drive Requirements
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS Drain – Source Voltage
-200V
VGS Gate – Source Voltage
±20V
ID Continuous Drain Current @ Tcase = 25°C
-4.0A
ID
IDM(1)
Continuous Drain Current @ Tcase = 100°C
Pulsed Drain Current
-2.4A
-16A
PD Total Power Dissipation @ Tcase = 25°C
25W
Linear De-rating Factor @ Tcase 25°C
200mW/°C
dv/dt(2) Peak Diode Recovery dv/dt
-5V/ns
TJ Operating Temperature Range
-55°C to +150°C
Tstg Storage Temperature Range
-55°C to +150°C
THERMAL CHARACTERISTICS
Symbol Parameters
RθJC
Thermal Resistance, Junction To Case
Max
5
Units
°C/W
Notes:
1) Repetitive Rating; Pulse width limited by maximum junction temperature
2) ISD -4.0A, di/dt -120A/µs, VDD -200V, TJ 150°C
3) Pulse width 380 µs; Duty Cycle 2%
4) By design. Not a production test.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 10351
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 3



2N6851
P-CHANNEL
POWER MOSFET
2N6851
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Symbol Parameters
Test Conditions
BVDSS
BVDSS
Tj
Drain-Source Breakdown
Voltage
Temperature Coefficent of
Breakdown Voltage
VGS = 0
Reference
to 25°C
ID = -1.0mA
ID = -1.0mA
RDS(on)(3)
Static Drain-Source
On-State Resistance
VGS(th)
gfs(3)
Gate Threshold Voltage
Forward Transconductance
VGS = -10V
VGS = -10V
VDS VGS
VDS -15V
ID = -2.4A
ID = -4.0A
Tj = 125°C
ID = -250µA
Tj = 125°C
Tj = -55°C
IDS = -2.4A
IDSS
Zero Gate Voltage
Drain Current
VGS = 0
VDS = 0.8BVDSS
Tj = 125°C
IGSS
IGSS
Gate-Source Leakage
VGS = ±20V
Tj = 125°C
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Qg(4)
Qgs(4)
Qgd(4)
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
VGS = 0
VDS = -25V
f = 1.0MHz
VGS = -10V
ID = -4.0A
VDS = 0.5BVDSS
VDD = -100V
ID = -4.0A
RG = 7.5
VGS = -10V
SOURCE – DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current
ISM
VSD(3)
trr(3)
Qrr(3)(4)
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS = -4.0A
IF = -4.0A
VGS = 0
VDD -50V
di/dt -100A/µs
ton Forward Turn - on Time
PACKAGE CHARACTERISTICS
LD Internal Drain Inductance
LS Internal Source Inductance
Min Typ Max Units
-200
V
-0.22
0.80
0.83
1.60
-2.0 -4.0
-1.0
-5.0
2.2
-25
-250
±100
±200
V/°C
V
S(Ʊ)
µA
nA
700
200
40
14.7 34.8
0.8 7.0
5.0 17
50
100
100
80
pF
nC
ns
-4.0
-16
-6.0
400
4.0
Negligible
A
V
ns
µC
5.0
nH
15
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 10351
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 3





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