2N7077

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET 2N7077 VDSS = 400V, ID(CONT) = 15A, RDS(on) = 300mΩ Hermetic Isolated Metal TO-254AA Package Integral Body Diode High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless VDS Drain – Source Voltage VGS Gate – Source Voltage ID ID Continuous Drain Current Continuous Drain Current TJ = 150°C Tc = 25°C Tc = 100°C IDM Pulsed Drain Current (1) PD Total Power Dissipation at Tc = 25°C Derate Above 25°C TJ Junction Temperature Range Tstg Storage Temperature Range THERMAL PROPERTIES Symbol Parameter RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% otherwise stated) 400V ±20V 15A 9.5A 60A 150W 1.2W/°C -55 to +150°C -55 to +150°C Max 0.83 50 Units °C/W Semelab Limited reserves the right to change test conditions, paramet...