2N7079

P-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) –100 rDS(on) (W) 0.210 TO-254AA Hermetic Package ID (A) –17 S 2N7079 G Case Isolated DSG Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) TC = 25_C TC = 100_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM PD TJ, Tstg TL Limit –100 "20 –17 –10.8 –68 100 40 –55 to 150 300 Unit V A W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink Symbol RthJA RthJC RthCS Typical 0.2 Maximum 50 1.25 Unit _C/W Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #1456 . Siliconix P-3673...