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2N7086 Dataheets PDF



Part Number 2N7086
Manufacturers TEMIC
Logo TEMIC
Description N-Channel Transistor
Datasheet 2N7086 Datasheet2N7086 Datasheet (PDF)

TEMIC Siliconix N-Channel Enhancement-Mode Transistor Product Summary V(BR)nSS (V) 200 rnS(on) (Q) 0.16 TO-257AB Hermetic Package o In (A) 14 D 2N7086 Case Isolated GD S TopV,ew S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = IS0"C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 s.

  2N7086   2N7086



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TEMIC Siliconix N-Channel Enhancement-Mode Transistor Product Summary V(BR)nSS (V) 200 rnS(on) (Q) 0.16 TO-257AB Hermetic Package o In (A) 14 D 2N7086 Case Isolated GD S TopV,ew S N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = IS0"C) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 sec.) ITc=2S"C ITc = loo"C ITc=25"C ITc= 100"C Symbol VDS VGS ID IDM Po TJ. Tstg TL Limit 200 ±20 14 8.5 56 60 23 -55 to 150 300 Unit V A W "C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink P-37012-Rev. B (06/01/94) Symbol RtbJA RtbJC RthCS 'JYpical 1.0 Maximum 80 2.1 Unit "CfW 6-205 TEMIC 2N7086 =Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Thre.



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