Document
TEMIC
Siliconix
N-Channel Enhancement-Mode Transistor
Product Summary
V(BR)nSS (V) 200
rnS(on) (Q) 0.16
TO-257AB Hermetic Package
o
In (A)
14
D
2N7086
Case Isolated
GD S TopV,ew
S N-Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = IS0"C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 sec.)
ITc=2S"C ITc = loo"C
ITc=25"C ITc= 100"C
Symbol
VDS VGS
ID
IDM
Po
TJ. Tstg TL
Limit
200 ±20 14 8.5 56 60 23 -55 to 150 300
Unit
V
A
W "C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink
P-37012-Rev. B (06/01/94)
Symbol
RtbJA RtbJC RthCS
'JYpical
1.0
Maximum
80 2.1
Unit
"CfW
6-205
TEMIC
2N7086
=Specifications (TJ 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Static Drain-Source Breakdown Voltage Gate Thre.
Similar Datasheet