2N7227JANTXV

TEMIC Siliconix 2N7227JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary VDS(V) 400 rDS(on) (Q) 0.415 ID (A) 14 Parametnc ltmits in accordance with MIL-S-J9500/592 where applicable. TO-254AA Hermetic Package o Case Isolated DSG ThpVlew D G~ S N·Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150°C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range lTC = 25°C ITc = 100°C ITc = 25°C Symbol VDS VGS ID IDM IAR PD TJ.T,lg limit 400 ±20 14 9 56 14 150 -55 to 150 Unit V A W °C Thermal Resistance Ratings Parameter Maximum lunction4o-Case Symbol RthJC limit 0.83 Unit °CIW P-37164-Rev. A (06/06/94) 6-225 TEMIC 2N7227JANTX/JANTXV =Specifications (TJ 25°C Unless Otherwise Noted) Siliconix Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Thresho...