BDW52A

isc Silicon PNP Power Transistor BDW52/A/B/C DESCRIPTION ·Collector Current -IC= -15A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A -80V(Min)- BDW52B; -100V(Min)- BDW52C ·Complement to Type BDW51/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW52 -45 VCBO Collector-Base Voltage BDW52A -60 V BDW52B -80 BDW52C -100 BDW52 -45 VCEO Collector-Emitter Voltage BDW52A -60 V BDW52B -80 BDW52C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak -20 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 125 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDW52/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW52 CONDITIONS MIN TYP. MAX UNIT -45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW52A BDW52B IC= -30mA; IB= 0 -60 -80 V BDW52C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A...