Document
Alfa-MOS
Technology
General Description
AFP2311A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOT-23 )
AFP2311A
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-2.8A,RDS(ON)=55mΩ@VGS=4.5V -20V/-2.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-1.8A,RDS(ON)=92mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design
Application
Portable Equipment Battery Powered System Net Working System
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP2311AS23RG
11YW
SOT-23
ϡʳ 11 parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week cod.