20V P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN1.0X0.6-3L )
AFP1601E
20V P-Channel Enhancement Mode MOSFET
Features
-20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design–in Low Battery Voltage Operation DFN1.0X0.6-3L package design
Application
Load/Power Switching Cell Phones, Pagers Battery Operated Systems Power Supply Converter Circuits
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1601E...
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