P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFP3911W
30V P-Channel Enhancement Mode MOSFET
Features
z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z DFN2X2-6L package design
Application
z Smart Phones, Tablet PCs, Mobile Computing : - Battery Switches - Load Switches - Power Management
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3911WFN226RG
391YW
DFN2X2-6L
※ 391 parts code ...
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