N & P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFC2527W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFC2527W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
AFC2527W
20V N & P Pair Enhancement Mode MOSFET
Features
z N-Channel 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V
z P-Channel -20V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=52mΩ@VGS=2.5V -20V/-2.4A,RDS(ON)=68mΩ@VGS=1.8V
z Super high density cell design for extremely low RDS (ON)
z Exceptional on-resistance and maximum DC current capability
z ESD protection z DFN2X2-6L package design
Pin Description ( DFN2X2-6L )
Application
z Portable Devices Such as Smart Phones, Tablet PCs and Mobile Computing - Load Switches - Power Management - DC/DC Converters
©Alfa-MOS Technology Corp. Rev.B Jan. 2018
www...
Similar Datasheet