N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2920W
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V z 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z ESD protection z DFN2X2-6L package design
Application
z Load Switch with Low Voltage Drop z Load Switch for 1.2 V/1.5 V/1.8 V Power Lines z Smart Phones, Tablet PCs, Portable Media Players
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source1 Gate1 Drain2 Source2 Gate2 Drain1
Ordering Information
Part Ordering No.
Part Marking
P...
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