N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN2X2-6L )
AFN2912W
20V N-Channel Enhancement Mode MOSFET
Features
z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely
low RDS (ON) z DFN2X2-6L package design
Application
z Power Management in Note book z LED Display z DC-DC System z LCD Panel
Pin Define
Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source1 Gate1 Drain2 Source2 Gate2 Drain1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN2912WFN226RG
W12YW
DFN2X2-6L
※ Y year code ※ W week code
※ AFN2912WFN226RG : 7” Tape & Reel ; Pb- Free ; Halogen –Fr...
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