Complementary (N- and P-Channel) MOSFET
Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 30
...
Description
Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 30
0.017 at VGS = 10 V
0.020 at VGS = 4.5 V
P-Channel
0.027 at VGS = - 4.5 V -8
0.037 at VGS = - 2.5 V
ID (A)a Qg (Typ.)
12 7.9
11
-8 - 6.8
16.5
S1 1 G1 2 S2 3 G2 4
SO-8
8D 7D 6D 5D
Top View Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Level Shift Load Switch
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
30 ± 20 12 9.5 9b, c 7.2b, c
-8 ±8 -8 - 6.4 - 6.4b, c - 5.1b, c
Pulsed Drain Current (10 µs Pulse Width) Source-Drain Cu...
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