AFN8206WS

Alfa-MOS Technology General Description AFN8206WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X3-6L ) AFN8206WS 20V N-Channel Enhancement Mode MOSFET Features 20V/3.0A,RDS(ON)=11mΩ@VGS=4.5V 20V/3.0A,RDS(ON)=13mΩ@VGS=2.5V 20V/2.5A,RDS(ON)=20mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) ESD Protection ( 2KV ) Diode design–in DFN2X3-6L package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 Symbol S1 S1 G1 G2 S2 S2 Description Source1 Source1 Gate1 Gate2 Source2 Source2 Ordering Information Part Ordering No. Part Marking Package AFN8206WSFN236RG W06YW DFN2X3-6L ϡʳ Y year code ϡʳ W week code ϡʳ AFN8206WSFN236RG : 7” Tape & Reel ; Pb- ...