AFN4808W

Alfa-MOS Technology General Description AFN4808W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X3-8L ) AFN4808W 20V N-Channel Enhancement Mode MOSFET Features 20V/6.2A,RDS(ON)=30mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=35mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=42mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN2X3-8L package design Application Load Switch Portable Equipment Battery Powered System Pin Define Pin 1 2 3 4 5 6 7 8 Symbol G1 S1 S1 S1 S2 S2 S2 G2 Ordering Information Part Ordering No. Part Marking Package AFN4808WFN238RG W08YW DFN2X3-8L ϡʳ W08 parts code ϡʳ Y year c...