N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
AFN3306WS
30V N-Channel Enhancement Mode MOSFET
Features
30V/20A,RDS(ON)=4.0mΩ@VGS=10V 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability DFN3X3-8L package design
Application
DC-DC Converter
POL
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
Unit
AFN3306WSFN338RG
3306WS
DFN3X3-8L
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