N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3X3-8L )
AFN3310W
30V N-Channel Enhancement Mode MOSFET
Features
30V/16A,RDS(ON)=17mΩ@VGS=10V 30V/10A,RDS(ON)=19mΩ@VGS=4.5V Super high density cell design for extremely
low RDS (ON) DFN3X3-8L package design
Application
DC/DC Converter Load Switch Power Management in Notebook Computer
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFC3326WSFN338RG
AFC3326WS YYMMDD
DFN3X3-8L
※ YY year code
※ MM month code
※ DD date code
※ AFN3310WFN338RG : 13”Tape & Reel ; Pb- Fre...
Similar Datasheet