AFN7412S

Alfa-MOS Technology General Description AFN7412S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7412S 30V N-Channel Enhancement Mode MOSFET Features 30V/8A,RDS(ON)=24mΩ@VGS=10V 30V/7A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design Application DC-DC Converter POL Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No. Part Marking Package AFN7412SFN308RG 7412S DFN3.3X3.3-8L ϡʳ YY ϡʳ MM ϡʳ DD year code month code date code ϡʳ AFN7412SFN308RG : 13”Tape & Reel ; Pb-...