N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN7412S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN7412S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN3.3X3.3-8L )
AFN7412S
30V N-Channel Enhancement Mode MOSFET
Features
30V/8A,RDS(ON)=24mΩ@VGS=10V 30V/7A,RDS(ON)=30mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3.3X3.3-8L package design
Application
DC-DC Converter POL
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN7412SFN308RG
7412S
DFN3.3X3.3-8L
ϡʳ YY ϡʳ MM ϡʳ DD
year code month code date code
ϡʳ AFN7412SFN308RG : 13”Tape & Reel ; Pb-...
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