Document
Alfa-MOS
Technology
General Description
AFN6238S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN 5X6-8L )
AFN6238S
40V N-Channel Enhancement Mode MOSFET
Features
z 40V/20A,RDS(ON)=6.8mΩ@VGS=10V z 40V/15A,RDS(ON)=8.5mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z Exceptional on-resistance and maximum DC
current capability z DFN 5X6-8L package design
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SYMBOL
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Application
z Synchronous Rectification z POL
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Description Source Source Source Gate Drain Drain Drain Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6238SFN568RG
6238S
DFN.