N-Channel MOSFET
Alfa-MOS
Technology
AFN6670S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN6670S, N-Channel enhancement...
Description
Alfa-MOS
Technology
AFN6670S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN6670S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN5X6-8L )
Features
z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 8.0mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z DC/DC Primary Side Switch z Industrial z Synchronous Rectification z Load Switch z DC/DC Converters z DC/AC Inverters
Pin Define
Pin 1~3
4 5~8
Symbol S G D
Description Source Gate Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6670SFN568RG
6670S
DFN5X6-8L
※ 6670S
: Parts Code
※ YYMMDD : Date Code
※ AFN6670SFN568RG : 13”Tape & Re...
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