Dual N-Channel MOSFET
Alfa-MOS
Technology
AFN7960AS
60V Dual N-Channel Enhancement Mode MOSFET
General Description
AFN7960AS, Dual N-Channel...
Description
Alfa-MOS
Technology
AFN7960AS
60V Dual N-Channel Enhancement Mode MOSFET
General Description
AFN7960AS, Dual N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS (ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( DFN5X6-8L )
Features
60V/12A,RDS(ON)= 20mΩ@VGS=10V 60V/10A,RDS(ON)= 24mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) DFN 5X6-8L package design
Application
Motor and Load Control Power Management in White LED System LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN7960ASFN568RG
7960AS
DFN 5X6-8L
ϡʳ 7 9 6 0 A S : Parts Code
ϡʳ YYMMDD : Date Code
ϡʳ A...
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