P-Channel MOSFET
Alfa-MOS
Technology
General Description
AFP1800WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to...
Description
Alfa-MOS
Technology
General Description
AFP1800WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFP1800WS
100V P-Channel Enhancement Mode MOSFET
Features
z -100/-7.0A,RDS(ON)= 50mΩ@VGS= -10V z -100/-5.0A,RDS(ON)= 58mΩ@VGS= -4.5V z Super high density cell design for extremely
low RDS (ON) z SOP-8P package design
Application
z Full Bridge DC/DC Converter z Load Switch
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP1800WSS8RG
1800WS
SOP-8P
※ A Lot code ※ B Date code
※ AFP1800WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2018
Description Source Source Source Gate Drain Drain Drain Drain
Unit ...
Similar Datasheet