N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN4190S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN4190S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4190S
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/15A,RDS(ON)=9.2mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely
low RDS (ON) z SOP-8P package design
Application
z Networking / Telecom / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch
Pin Define
Pin 1~3
4 5~8
Symbol S G D
Description Source Gate Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4190SS8RG
4190S
SOP-8P
※ A Lot code
※ B Date code
※ AFN4190SS8RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.B Jan....
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