N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN4896W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4896W
100V N-Channel Enhancement Mode MOSFET
Features
100V/6.8A,RDS(ON)=115mΩ@VGS=10V 100V/5.6A,RDS(ON)=125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S S S G D D D D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4896WS8RG
4896W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4896WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev. A June 2014
Description Source Source Source Gate Drain ...
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