AFN4286WS

Alfa-MOS Technology General Description AFN4286WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4286WS 40V N-Channel Enhancement Mode MOSFET Features 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/5A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Rectification CCFL Inverter Car Charger POL, IBC - Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4286WSS8RG 4286WS SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4286WSS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Mar. 2016 Description Source 1 Gate 1 Source 2 Gate 2 Dr...