N-Channel MOSFET
Alfa-MOS
Technology
General Description
AFN4906W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN4906W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4906W
40V N-Channel Enhancement Mode MOSFET
Features
40V/6.8A,RDS(ON)=52mΩ@VGS=10V 40V/5.6A,RDS(ON)=70mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4906WS8RG
4906W
SOP-8P
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4906WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A May 2014
Description Source 1 Gate 1 Source 2...
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