Document
Alfa-MOS
Technology
General Description
AFN4998W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( SOP-8P )
AFN4998W
100V N-Channel Enhancement Mode MOSFET
Features
100V/5.6A,RDS(ON)=120mΩ@VGS=10V 100V/4.2A,RDS(ON)=130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design
Application
Motor and Load Control AD/DC Inverter Systems. Power Management in White LED System
Pin Define
Pin 1 2 3 4 5 6 7 8
Symbol S1 G1 S2 G2 D2 D2 D1 D1
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4998WS8RG
4998W
SOP-8P
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN4998WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Aug. 2012
Description Source 1 Gate 1 Source 2 .