AFN4910W

Alfa-MOS Technology AFN4910W 40V N1 & N2 Pair Enhancement Mode MOSFET General Description AFN4910W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) Features N1 Channel 40V/10A,RDS(ON)= 19mΩ@VGS=10V 40V/ 8A,RDS(ON)= 25mΩ@VGS=4.5V N2 Channel 40V/10A,RDS(ON)= 10mΩ@VGS=10V 40V/ 8A,RDS(ON)= 12mΩ@VGS=4.5V Application Car Charger POL, IBC Secondary Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Ordering Information Part Ordering No. Part Marking Package AFN4910WS8RG 4910W SOP-8P ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN4910WS8RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Nov. 2015 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 U...