H3*8
P-Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The +0'5 is the P-Channel logic enhancement mode power fiel...
H3*8
P-Channel 20V (D-S) MOSFET
GENERAL DESCRIPTION
The +0'5 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System
FEATURES
● RDS(ON)= 0.48Ω @VGS=-4.5V ● RDS(ON)= 0.67Ω @VGS=-2.5V ● RDS(ON)= 0.95Ω @VGS=-1.8V ● RDS(ON)= 2.20Ω @VGS=-1.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current
capability ● Capable doing Cu wire bonding
● Load Switch ● DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
-20 ±6
Unit V V
* Th Oct, 2014-Ver1.0
Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com
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.3*8
P-Channel 20V (D-S) MOSFET
Electrica...
