Document
HM2301F
P-Channel Enhancement Mode Power MOSFET
Description
The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● PWM applications ● Load switch
D G
S Schematic diagram
A1SHB Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
HM2301F
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current -Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Oper.