HM2301BJR

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -20 MOSFET Product Summary RDS(on)(Ω ) ID(mA) 0.45@ VGS=-4.5V 0.62@ VGS=-2.5V -800 0.86@ VGS=-1.8V HM2301BJR P-Channel MOSFET D（3） G（1） S（2） Absolute maximum rating@25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren(TJ=150℃) Source current(Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Thermal resistance Parameter Channel to ambient Symbol VDS VGS ID IDP IS ISP PD TCH TSTG Value -20 ±10 -800 -1200 -500 -1200 150 150 -55 to +150 Units V V mA mA mW ℃ ℃ Symbol Rth(ch-a) Limits 833 Units ℃/W Rev.06.1 1 HM2301BJR P- P-Channel MOSFET Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Stat...