HM2305B

HM2305B P-Channel Enhancement Mode Power MOSFET Description The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -4.1A RDS(ON) <78mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D G S Schematic diagram 2305B Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2305B HM 2305B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ ID TA =70℃ Drain Cu...