HM3415E

HM3415E P-Channel Enhancement Mode Power MOSFET Description The HM3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON) < 53mΩ @ VGS=-2.5V RDS(ON) < 40mΩ @ VGS=-4.5V ESD Rating: 2500V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Schematic diagram Marking and pin Assignment SOT-23/ top view Package Marking And Ordering Information Device Marking Device Device Package 3415 HM3415E SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Max...