HM2309B

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦188mΩ@VGS=-10V ● RDS(ON)≦266mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management ● Portable Equipment ● Battery Powered System ● Load Switch Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -60 ±20 Unit V V 2309% Marking and pin Assignment SOT-23-3L top view D G S Schematic diagram Jun, 2013-Ver1.1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com HM2309B P-Channel 60V(D-S) Electrical Characteristics (Tj =25℃ Unles...