HM2309A

HM2309A P-Channel Enhancement Mode Power MOSFET Description The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Load switch ● PWM application Schematic diagram 60P04Y Marking and pin Assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking 60P04Y Device HM2309A Device Package SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temp...